描述
bsm100gb120dn2k
IGBT 模块 1200V 100A DUAL
否
Infineon Technologies
IGBT Silicon Modules
Dual 集电极—发射极最大电压
600 V
1.95 V 在25
230 A
400 nA
445 W
+ 125 C
34MM
BSM100GB120DN2K
Siemens Ltd
SIEMENS
9
114 kb
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)